Universal linear density of states for tunneling into the two-dimensional electron gas in a magnetic field

被引：43

作者：

Chan, HB ^{[1
]}

Glicofridis, PI ^{[1
]}

Ashoori, RC ^{[1
]}

Melloch, MR ^{[1
]}

机构：

[1] PURDUE UNIV,DEPT ELECT ENGN,W LAFAYETTE,IN 47907

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 15期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.79.2867

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have developed a technique capable of measuring the tunneling current into both localized and conducting states in a 2D electron system. I-V characteristics for tunneling are obtained with no distortions arising from low 2D in-plane conductivity. In a perpendicular magnetic field, a pseudogap develops in the tunneling density of states at the Fermi energy. We resolve a linear energy dependence of this pseudogap at low excitations. The slopes of this linear gap are strongly field dependent. The data are suggestive of a new model of the gap in the presence of disorder and external screening.

引用

页码：2867 / 2870

页数：4

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