Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition

被引：0

作者：

Wan, Wenyan ^{[1
]}

Cheng, Xinhong ^{[1
]}

Cao, Duo ^{[1
]}

Zheng, Li ^{[1
]}

Xu, Dawei ^{[1
]}

Wang, Zhongjian ^{[1
]}

Xia, Chao ^{[1
]}

Shen, Lingyan ^{[1
]}

Yu, Yuehui ^{[1
]}

Shen, DaShen ^{[2
]}

机构：

[1] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

[2] Univ Alabama, Dept Elect & Comp Engn, Huntsville, AL 35899 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2014年 / 32卷 / 01期

关键词：

SILICON-ON-INSULATOR; THIN-FILMS; HFO2;

D O I：

10.1116/1.4850175

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Amorphous HfLaO dielectric film was successfully deposited on a silicon-on-insulator (SOI) substrate by plasma enhanced atomic layer deposition with in situ plasma treatment. The HfLaO film retained its insulating characteristics and is thermally stable even after annealing at 800 degrees C. The film has a dielectric constant of 27.3 and leakage of only 0.03 mA/cm(2) at a gate bias of vertical bar V-g - V-fb vertical bar = 1V. The capacitance equivalent oxide thickness is 0.7 nm. A new parallel electrode testing structure was applied to measure C-V and J-V characteristics for the SOI samples. This testing method for metal-oxide-semiconductor capacitors has potential uses for measuring other layered substrates. (C) 2014 American Vacuum Society.

引用

页数：4

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