Temperature effects and long term fading of implanted and unimplanted gate oxide RADFETs

被引：40
作者：
Haran, A [1 ]
Jaksic, A
Refaeli, N
Eliyahu, A
David, D
Barak, J
机构：
[1] Soreq NRC, IL-81800 Yavne, Israel
[2] Natl Univ Ireland Univ Coll Cork, Natl Microelect Res Ctr, Cork, Ireland
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 05期
关键词：
dosimetry; fading; pMOS dosimeters; RADFETs;
D O I：
10.1109/TNS.2004.835065
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Key aspects of continuous operation of Radiation Sensitive Field Effect Transistors (RADFETs) as radiation monitors in space missions are addressed. The effect of possible temperature fluctuations and long-term fading on threshold-voltage measurement of Implanted and Unimplanted gate oxide RADFETs were studied. Evidence for temperature coefficient changes following irradiation and annealing cycles is presented. In addition, fading of unimplanted gate oxide RADFETs is shown to be significantly lower than that of Implanted ones.
引用
收藏
页码：2917 / 2921
页数：5
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