The nature of white luminescence in SiO2:C layers

被引：6

作者：

Vasin, A. V. ^{[1
]}

Kushnirenko, V. I. ^{[1
]}

Lysenko, V. S. ^{[1
]}

Nazarov, A. N. ^{[1
]}

Ishikawa, Yukari ^{[2
]}

Salonen, J. ^{[3
]}

机构：

[1] Natl Acad Sci Ukraine, VE Lashkarev Inst Semicond Phys, UA-03028 Kiev, Ukraine

[2] Japan Fine Ceram Ctr, Nagoya, Aichi 4568587, Japan

[3] Univ Turku, Dept Phys, FI-20014 Turku, Finland

来源：

TECHNICAL PHYSICS LETTERS | 2009年 / 35卷 / 06期

关键词：

SILICON; PHOTOLUMINESCENCE; OXIDATION; SI;

D O I：

10.1134/S1063785009060224

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon oxide layers containing incorporated carbon (SiO2:C) have been obtained by sequential thermal carbonization/oxidation of porous silicon. The as-synthesized SiO2:C layers exhibit intense white photoluminescence (PL). The characteristics of excitation, emission, and relaxation of the white luminescence in the SiO2:C layers have been studied. It is established that the observed broad PL band in fact consists of at least two subbands with the maxima of intensity in the green and blue spectral regions. Based on the experimental data, a model of the PL excitation and radiative recombination in SiO2:C layers is proposed and justified.

引用

页码：559 / 562

页数：4

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