Lateral Bilayer MoS2-WS2 Heterostructure Photodetectors with High Responsivity and Detectivity

被引：84

作者：

Ye, Kun ^{[1
]}

Liu, Lixuan ^{[1
,2
]}

Liu, Yujie ^{[1
]}

Nie, Anmin ^{[1
]}

Zhai, Kun ^{[1
]}

Xiang, Jianyong ^{[1
]}

Wang, Bochong ^{[1
]}

Wen, Fusheng ^{[1
]}

Mu, Congpu ^{[1
]}

Zhao, Zhisheng ^{[1
]}

Gong, Yongji ^{[2
]}

Liu, Zhongyuan ^{[1
]}

Tian, Yongjun ^{[1
]}

机构：

[1] Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Ctr High Pressure Sci, Qinhuangdao 066004, Hebei, Peoples R China

[2] Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China

来源：

ADVANCED OPTICAL MATERIALS | 2019年 / 7卷 / 20期

基金：

中国国家自然科学基金;

关键词：

bilayer; heterostructure; in-plane; MoS2; photodetector; WS2; LAYER MOS2; GROWTH; WS2; PHOTOLUMINESCENCE; GENERATION;

D O I：

10.1002/adom.201900815

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

2D heterostructures combining different layered semiconductors have received great interest due to their intriguing electrical and optical properties. However, the arbitrary growth of layers in a lateral heterostructure remains a challenge. Here, the synthesis of large-scale lateral bilayer (LBL) WS2-MoS2 heterostructures is reported by a two-step chemical vapor deposition route. Raman, photoluminescence, and second-harmonic generation images show the sharp boundaries between WS2 and MoS2 domains in the heterostructure. Atomically resolved scanning transmission electron microscopy further reveals that sharp boundaries are formed by seamless connections via a lateral zigzag epitaxy between WS2 and MoS2. Notably, the photodetector device based on the LBL WS2-MoS2 heterostructure exhibits ultrahigh photoresponsivity and detectivity (6.72 x 10(3) A W-1 and 3.09 x 10(13) Jones for 457 nm laser light, respectively), orders of magnitude higher than those of MoS2 and WS2 monocrystals. These excellent performances render LBL WS2-MoS2 heterostructures as promising candidates for next-generation optoelectronics.

引用

页数：7

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