Fluxless Sn-3.5 mass % Ag solder bump flip chip bonding by ultrasonic wave

被引：13
|
作者：
Hong, SM [1 ]
Kang, CS
Jung, JP
机构：
[1] Samsung Elect Co Ltd, Mechatron Ctr, Inst Intelligent Syst, Microjoining Lab, Suwon 442742, Kyungki Do, South Korea
[2] Univ Seoul, Sch Mat Sci & Engn, Seoul 151744, South Korea
[3] Univ Seoul, Dept Mat Sci & Engn, Seoul 130743, South Korea
来源：
MATERIALS TRANSACTIONS | 2002年 / 43卷 / 06期
关键词：
flip chip bonding; lead-free solder; fluxless; ultrasonic wave; solder; bump; die shear strength;
D O I：
10.2320/matertrans.43.1336
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The ultrasonic solder bump flip chip bonding was investigated as a method of fluxless bonding. The 100 mum-diameter Sn-3.5 mass%Ag solder bumps were formed at 12 positions on a test Si-die by laser ball bonding process. The test flip chip dies were bonded to a TSM-coated glass substrate on a hotplate at different bonding loads and ultrasonic power condition. The die shear strength was evaluated and fracture surfaces were examined with SEM. The Sn-Ag solder flip chip bonding was possible at lower temperature than the melting point of Sn-3.5Ag solder. The die shear strength increased with increasing bonding temperature, bonding load. and ultrasonic power. However, at excessive bonding load condition over 0.8 N/bump, the die shear strength decreased. The bump height decreased with increasing bonding load.
引用
收藏
页码：1336 / 1340
页数：5
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