Large electron-phonon coupling at an interface

被引：96
作者：
Luh, DA
Miller, T
Paggel, JJ
Chiang, TC
机构：
[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
[2] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
[3] Free Univ Berlin, Inst Expt Phys, D-14195 Berlin, Germany
来源：
PHYSICAL REVIEW LETTERS | 2002年 / 88卷 / 25期
关键词：
D O I：
10.1103/PhysRevLett.88.256802
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The strength of electron-phonon coupling in atomically uniform films of Ag on Fe is determined by angle-resolved photoemission from quantum well states in these films over a wide temperature range. As the film thickness is reduced, contributions from the surface and interface should become more important, and, experimentally, a large enhancement with superimposed quantum oscillations is observed. An analysis of the quantum oscillations indicates that this large enhancement is an interface effect.
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相关论文
共 15 条
[1]  
*APS, 2001 APS MARCH M
[2]   Large value of the electron-phonon coupling parameter (λ=1.15) and the possibility of surface superconductivity at the Be(0001) surface [J].
Balasubramanian, T ;
Jensen, E ;
Wu, XL ;
Hulbert, SL .
PHYSICAL REVIEW B, 1998, 57 (12) :R6866-R6869
[3]   Photoemission studies of quantum well states in thin films [J].
Chiang, TC .
SURFACE SCIENCE REPORTS, 2000, 39 (7-8) :181-235
[4]  
Grimvall G., 1981, ELECT PHONON INTERAC
[5]   Phonon-induced decay of a quantum-well hole:: One monolayer Na on Cu(111) [J].
Hellsing, B ;
Carlsson, J ;
Walldén, L ;
Lindgren, SÅ .
PHYSICAL REVIEW B, 2000, 61 (03) :2343-2348
[6]   Photoemission study of a strongly coupled electron-phonon system [J].
Hengsberger, M ;
Purdie, D ;
Segovia, P ;
Garnier, M ;
Baer, Y .
PHYSICAL REVIEW LETTERS, 1999, 83 (03) :592-595
[7]  
HUFNER DS, 2001, P WORKSH ULTR SURF D
[8]  
JOUKOV VP, 2001, UNPUB P WORKSH ULTR
[9]  
MADELUNG O, 1978, INTRO SOLID STATE PH, P177
[10]   PHONON CONTRIBUTION TO QUASI-PARTICLE LIFETIMES IN CU MEASURED BY ANGLE-RESOLVED PHOTOEMISSION [J].
MCDOUGALL, BA ;
BALASUBRAMANIAN, T ;
JENSEN, E .
PHYSICAL REVIEW B, 1995, 51 (19) :13891-13894
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