Semiconductor polar surfaces: mechanisms of the stability of non-reconstructed III-V ((1)over-bar(1)over-bar(1)over-bar) surfaces

被引：19

作者：

Mankefors, S ^{[1
]}

Nilsson, PO ^{[1
]}

Kanski, J ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Phys, S-41296 Gothenburg, Sweden

来源：

SURFACE SCIENCE | 1999年 / 443卷 / 03期

关键词：

density functional calculations; gallium arsenide; gallium phosphide; indium arsenide; indium phosphide; low index single crystal surfaces; surface electronic phenomena (work function; surface potential; surface states; etc.); surface structure; morphology; roughness and topography;

D O I：

10.1016/S0039-6028(99)01022-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The mechanisms of the stability of bulk terminated semiconductor polar ((111) over bar) surfaces are investigated for the first time with ab initio methods. In the cases of InAs((111) over bar), InP((111) over bar) and GaP((111) over bar), charge is found to be removed from the surfaces, which avoids an electrostatic catastrophe and stabilizes the surfaces. These new findings properly account for the experimental existence of these unreconstructed surfaces. The GaAs((111) over bar) surface is, however, predicted to be unstable in accordance with experiment. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：L1049 / L1054

页数：6

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