Characterization of CdTe sensors with Schottky contacts coupled to charge-integrating pixel array detectors for X-ray science

被引:18
作者
Becker, J. [1 ,2 ]
Tate, M. W. [1 ]
Shanks, K. S. [1 ]
Philipp, H. T. [1 ]
Weiss, J. T. [1 ,2 ]
Purohit, P. [1 ]
Chamberlain, D. [2 ]
Ruff, J. P. C. [2 ]
Gruner, S. M. [1 ,2 ]
机构
[1] Cornell Univ, Lab Atom & Solid State Phys, Ithaca, NY 14853 USA
[2] Cornell Univ, CHESS, Ithaca, NY 14853 USA
基金
美国国家科学基金会; 美国国家卫生研究院;
关键词
Instrumentation for synchrotron radiation accelerators; X-ray detectors; SEMICONDUCTOR RADIATION DETECTORS; CHIP; TIME;
D O I
10.1088/1748-0221/11/12/P12013
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Pixel Array Detectors (PADs) consist of an x-ray sensor layer bonded pixel-by-pixel to an underlying readout chip. This approach allows both the sensor and the custom pixel electronics to be tailored independently to best match the x-ray imaging requirements. Here we present characterizations of CdTe sensors hybridized with two different charge-integrating readout chips, the Keck PAD and the Mixed-Mode PAD (MM-PAD), both developed previously in our laboratory. The charge-integrating architecture of each of these PADs extends the instantaneous counting rate by many orders of magnitude beyond that obtainable with photon counting architectures. The Keck PAD chip consists of rapid, 8-frame, in-pixel storage elements with framing periods < 150 ns. The second detector, the MM-PAD, has an extended dynamic range by utilizing an in-pixel overflow counter coupled with charge removal circuitry activated at each overflow. This allows the recording of signals from the single-photon level to tens of millions of x-rays/pixel/frame while framing at 1 kHz. Both detector chips consist of a 128 x 128 pixel array with (150 mu m)(2) pixels.
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页数:29
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