Photosensitivity and photoemission porous silicon based heterostructures

被引：0
|
作者：
Monastyrskii, LS [1 ]
Vlasov, AP [1 ]
Olenych, IB [1 ]
Parandiy, PP [1 ]
Savchyn, VP [1 ]
Kostiukevych, SP [1 ]
机构：
[1] Lviv Natl Univ, Dept Phys, Lvov, Ukraine
来源：
SILICON-BASED AND HYBRID OPTOELECTRONICS IV | 2002年 / 4654卷
关键词：
RF magnetron sputtering; thin films; Al2O3; porous silicon; photosensitivity; photoemission; heterostructure;
D O I：
10.1117/12.463852
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We were investigated photoluminescence, cathodoluminescence and photosensitivity properties of porous silicon (PS) and PS capsulated by Al2O3 thin film. This film was deposited by RF magnetron sputtering in argon - oxygen atmosphere and had crystalline structure. PS was processed in hydrogen under the high pressure. Light-emission and photosensitivity spectra such double structures in visible and infrared region were investigated. The process of light emitting had tendency to decrease. The cathodoluminescence decay for Al2O3-PS-silicon substrate heterostructure was lower then for PS-silicon substrate.
引用
收藏
页码：174 / 179
页数：6
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