Automatic TCAD model calibration for multi-cellular Trench-IGBTs

被引：1
|
作者：
Maresca, Luca [1 ]
Breglio, Giovanni [1 ]
Irace, Andrea [1 ]
机构：
[1] Univ Naples Federico II, Dept Elect Engn & Informat Technol, Naples, Italy
来源：
SOLID-STATE ELECTRONICS | 2014年 / 91卷
关键词：
Calibration; Insulated gate bipolar transistor; SHORT-CIRCUIT; CARRIER RECOMBINATION; FAILURE-MECHANISM; SILICON; CAPABILITY; ELECTRON; LIFETIME; DEVICES; FIELD; AID;
D O I：
10.1016/j.sse.2013.09.004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
TCAD simulators are a consolidate tool in the field of the semiconductor research because of their predictive capability. However, an accurate calibration of the models is needed in order to get quantitative accurate results. In this work a calibration procedure of the TCAD elementary cell, specific for Trench IGBT with a blocking voltage of 600 V, is presented. It is based on the error minimization between the experimental and the simulated terminal curves of the device at two temperatures. The procedure is applied to a PT-IGBT and a good predictive capability is showed in the simulation of both the short-circuit and turn-off tests. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：36 / 43
页数：8
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