Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements

被引：11

作者：

Karboyan, S. ^{[1
]}

Tartarin, J. G. ^{[1
]}

Rzin, M. ^{[2
]}

Brunel, L. ^{[2
,4
]}

Curutchet, A. ^{[2
]}

Malbert, N. ^{[2
]}

Labat, N. ^{[2
]}

Carisetti, D. ^{[3
]}

Lambert, B. ^{[4
]}

Mermoux, M. ^{[5
]}

Romain-Latu, E. ^{[6
]}

Thomas, F. ^{[6
]}

Bouexiere, C. ^{[7
]}

Moreau, C. ^{[7
]}

机构：

[1] Univ Toulouse, LAAS CNRS, F-31031 Toulouse, France

[2] Univ Bordeaux, IMS, CNRS UMR 5218, F-33405 Talence, France

[3] Thales Res & Technol, F-91767 Palaiseau, France

[4] United Monolith Semicond, F-91140 Villebon Sur Yvette, France

[5] UMR 5279 CNRS, LEPMI, F-38402 St Martin Dheres, France

[6] SERMA Technol, F-38040 Grenoble, France

[7] Delegat Gen Armement, F-35998 Rennes, France

来源：

MICROELECTRONICS RELIABILITY | 2013年 / 53卷 / 9-11期

关键词：

RELIABILITY; TRANSISTORS; MESFETS; DEVICES;

D O I：

10.1016/j.microrel.2013.07.020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The study of the pulsed drain current or noise characteristics in AlGaN/GaN HEMTs is the key of knowledge for designing the power amplifiers, the low noise amplifiers and the oscillators or mixers, but it is well accepted today that this study is not fully accomplished without pointing on the effect of the gate leakage current; It is obvious that the transistor's leakage current may disturb its operation at high power and high frequency. Leakage currents studies are also an area of great importance in optimization of safe operating area and reliability of HEMTs. Therefore, room temperature pulsed I-V and low frequency noise measurements of gate and drain currents of AlGaN/GaN HEMTs have been investigated under different bias conditions on two devices showing identical drain current and different gate current levels. The results show a correlation between two non-destructive measurement techniques applied on devices under test. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：1491 / 1495

页数：5

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