共 21 条
[2]
ASHIDA S, 1995, P 17 DRY PROC S TOK, P21
[3]
SCALING OF SI AND GAAS TRENCH ETCH RATES WITH ASPECT RATIO, FEATURE WIDTH, AND SUBSTRATE-TEMPERATURE
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1995, 13 (01)
:92-104
[4]
BAILEY AD, 1995, JPN J APPL PHYS 1, V34, P2083
[6]
DEPP SW, 1993, SCI AM, V268, P90
[7]
GABRIEL CT, 1992, SOLID STATE TECHNOL, V35, P81
[8]
MICROSCOPIC UNIFORMITY IN PLASMA-ETCHING
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1992, 10 (05)
:2133-2147
[9]
ION-TRANSPORT ANISOTROPY IN LOW-PRESSURE, HIGH-DENSITY PLASMAS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1993, 11 (05)
:1884-1889
[10]
HASHIMOTO K, 1995, P DRY PROC S EL SOC, P17