Three-dimensional InP-DHBT on SiGe-BiCMOS integration by means of Benzocyclobutene based wafer bonding for MM-wave circuits

被引：5
|
作者：
Ostermay, I. [1 ]
Thies, A. [1 ]
Kraemer, T. [1 ]
John, W. [1 ]
Weimann, N. [1 ]
Schmueckle, F-J [1 ]
Sinha, S. [1 ]
Krozer, V. [1 ]
Heinrich, W. [1 ]
Lisker, M. [2 ]
Tillack, B. [2 ]
Krueger, O. [1 ]
机构：
[1] Leibniz Inst Hochstfrequenztech FBH, Ferdinand Braun Inst, D-12489 Berlin, Germany
[2] IHP Frankfurt Oder, D-15236 Frankfurt, Oder, Germany
来源：
MICROELECTRONIC ENGINEERING | 2014年 / 125卷
关键词：
Heterojunction bipolar transistors; Indium phosphide; Monolithic integrated circuits; Three-dimensional integrated circuits; Wafer bonding; Wafer scale integration;
D O I：
10.1016/j.mee.2013.11.012
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In order to benefit from the material properties of both InP-HBT and SiGe-BiCMOS technologies we have employed three-dimensional (3D) Benzocyclobutene (BCB)-based wafer bonding integration scheme. A monolithic wafer fabrication process based on transfer-substrate technology was developed, enabling the realization of complex hetero-integrated high-frequency circuits. Miniaturized vertical interconnects (vias) with low insertion loss and excellent broadband properties enable seamless transition between the InP and BiCMOS sub-circuits. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：38 / 44
页数：7
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