Effects of shallow trench isolation on low frequency noise characteristics of source-follower transistors in CMOS image sensors

D O I：

10.1016/j.sse.2016.02.005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of the shallow trench isolation (STI) edge on low frequency noise characteristics of sourcefollower (SF) transistors in CMOS image sensors (CIS) were investigated. Random telegraph signal (RTS) noise and 1/f noise were measured in a CIS operating voltage region for a realistic assessment. SF transistor with STI edge in contact with channel shows a lower probability of generating RTS noise but greater RTS amplitude due to the enhanced trap density induced by STI-induced damage. SF MOSFETs without STI exhibit a much lower 1/f noise power spectral density in spite of the greater RTS generation probability, which is due to the decreased trap density. Therefore, SF transistors without STI edge in contact with channel are promising candidates for low noise CIS applications. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：29 / 32

页数：4

共 15 条

[1] The Origins of Random Telegraph Noise in Highly Scaled SiON nMOSFETs [J].

Campbell, J. P. ;

Qin, J. ;

Cheung, K. P. ;

Yu, L. ;

Suehle, J. S. ;

Oates, A. ;

Sheng, K. .

2008 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 2008, :105-+

[2] Impact of STI effect on flicker noise in 0.13-μm RF nMOSFETs [J].

Chan, Chih-Yuan ;

Lin, Yu-Syuan ;

Huang, Yen-Chun ;

Hsu, Shawn S. H. ;

Juang, Ying-Zong .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (12) :3383-3392

[3] A CMOS Image Sensor With In-Pixel Buried-Channel Source Follower and Optimized Row Selector [J].

Chen, Yue ;

Wang, Xinyang ;

Mierop, Adri J. ;

Theuwissen, Albert J. P. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (11) :2390-2397

[4]

Jung-Deuk Bok, 2011, 2011 International Conference on Microelectronic Test Structures (ICMTS 2011), P87, DOI 10.1109/ICMTS.2011.5976865

[5]

Kim J. Y., 2005, IEEE WORKSH CCDS AIS, P149

[6] Effects of High-Pressure Annealing on Random Telegraph Signal Noise Characteristic of Source Follower Block in CMOS Image Sensor [J].

Kwon, Hyuk-Min ;

Han, In-Shik ;

Kwon, Sung-Kyu ;

Jang, Jae-Hyung ;

Kwak, Ho-Young ;

Choi, Woon-Il ;

Ha, Man-Lyun ;

Lee, Ju-Il ;

Hwang, Hyun-Sang ;

Lee, Hi-Deok .

IEEE ELECTRON DEVICE LETTERS, 2013, 34 (02) :190-192

[7] Characterization of Random Telegraph Signal Noise of High-Performance p-MOSFETs With a High-k Dielectric/Metal Gate [J].

Kwon, Hyuk-Min ;

Han, In-Shik ;

Bok, Jung-Deuk ;

Park, Sang-Uk ;

Jung, Yi-Jung ;

Lee, Ga-Won ;

Chung, Yi-Sun ;

Lee, Jung-Hwan ;

Kang, Chang Yong ;

Kirsch, Paul ;

Jammy, Raj ;

Lee, Hi-Deok .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (05) :686-688

[8] Bending Effects of Thermally-Expanded-Core Fiber and Its Application as Variable Optical Attenuator [J].

Kwon, Hyung Woo ;

Song, Jae Won ;

Kim, Kwang Taek .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (02)

[9] Effects of shallow trench isolation on silicon-on-insulator devices for mixed signal processing [J].

Lee, H ;

Park, YJ ;

Min, HS ;

Lee, JH ;

Shin, H ;

Sun, W ;

Kang, DG .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2002, 40 (04) :653-657

[10] Custom transistor layout design techniques for random telegraph signal noise reduction in CMOS image sensors [J].

Martin-Gonthier, P. ;

Havard, E. ;

Magnan, P. .

ELECTRONICS LETTERS, 2010, 46 (19) :1323-1324

← 1 2 →