One-Dimensional Nanostructures and Devices of II-V Group Semiconductors

被引:37
作者
Shen, Guozhen [1 ]
Chen, Di
机构
[1] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China
来源
NANOSCALE RESEARCH LETTERS | 2009年 / 4卷 / 08期
关键词
Nanowires; Nanotubes; Nanobelts; Semiconductors; Nanoelectronics; FIELD-EMISSION PROPERTIES; SINGLE-CRYSTALLINE; NANOWIRE HETEROSTRUCTURES; ZN3P2; NANOWIRES; NANOBELTS; GROWTH; NANOTUBES;
D O I
10.1007/s11671-009-9338-2
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The II-V group semiconductors, with narrow band gaps, are important materials with many applications in infrared detectors, lasers, solar cells, ultrasonic multipliers, and Hall generators. Since the first report on trumpet-like Zn3P2 nanowires, one-dimensional (1-D) nanostructures of II-V group semiconductors have attracted great research attention recently because these special 1-D nanostructures may find applications in fabricating new electronic and optoelectronic nanoscale devices. This article covers the 1-D II-V semiconducting nanostructures that have been synthesized till now, focusing on nanotubes, nanowires, nanobelts, and special nanostructures like heterostructured nanowires. Novel electronic and optoelectronic devices built on 1-D II-V semiconducting nanostructures will also be discussed, which include metal-insulator-semiconductor field-effect transistors, metal-semiconductor field-effect transistors, and p-n heterojunction photodiode. We intent to provide the readers a brief account of these exciting research activities.
引用
收藏
页码:779 / 788
页数:10
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