Thermoelectric properties of CoTiSb based compounds

被引：32

作者：

Barth, Joachim ^{[1
]}

Balke, Benjamin ^{[1
]}

Fecher, Gerhard H. ^{[1
]}

Stryhanyuk, Hryhoriy ^{[1
]}

Gloskovskii, Andrei ^{[1
]}

Naghavi, Shahab ^{[1
]}

Felser, Claudia ^{[1
]}

机构：

[1] Johannes Gutenberg Univ Mainz, Inst Anorgan & Analyt Chem, D-55099 Mainz, Germany

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2009年 / 42卷 / 18期

关键词：

HALF-HEUSLER COMPOUNDS; MERIT; SEMICONDUCTOR; SUBSTITUTION; TRANSPORT; CRYSTALS; FIGURE; PHASES;

D O I：

10.1088/0022-3727/42/18/185401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Several CoTiSb based compounds were synthesized and investigated on their thermoelectric properties. The aim was to improve the thermoelectric properties of CoTiSb by the systematic substitution of atoms or the introduction of additional Co into the vacant sublattice. The solid solutions Co1+xTiSb, Co1-yCuy TiSb and CoTiSb1-zBiz were synthesized. X-ray diffraction was used to investigate the crystal structure. The resistivity, the Seebeck coefficient and the thermal conductivity were determined for all compounds in the temperature range from 2 to 400 K. The highest figure of merit for each solid solution is presented. We were able to improve the figure of merit by a factor of approximately seven.

引用

页数：7

共 37 条

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