Design of ultra low-power RF oscillators based on the inversion coefficient methodology using BSIM6 model

被引：3

作者：

Guitton, G. ^{[1
,2
]}

Mangla, A. ^{[1
]}

Chalkiadaki, M. -A. ^{[1
]}

Fadhuile, F. ^{[2
]}

Taris, T. ^{[2
]}

Enz, C. ^{[1
]}

机构：

[1] Swiss Fed Inst Technol EPFL, ICLAB, CH-1015 Lausanne, Switzerland

[2] Univ Bordeaux, IMS Lab, Bordeaux INP, CNRS UMR 5218, 351 Cours Liberat, F-33400 Talence, France

来源：

INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2016年 / 44卷 / 02期

关键词：

design methodology; LC oscillators; phase noise; BSIM6; inversion coefficient;

D O I：

10.1002/cta.2082

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a fast and accurate way to design and optimize LC oscillators using the inversion coefficient (IC). This methodology consists of four steps: linear analysis, nonlinear analysis, phase noise analysis, and optimization using a figure of merit. For given amplitude of oscillation and frequency, we are able to determine all the design variables in order to get the best trade-off between current consumption and phase noise. This methodology is demonstrated through the design of Pierce and cross-coupled oscillators and has been verified with BSIM6 metal oxide semiconductor field effect transistor compact model using the parameters of a commercial advanced 40nm complementary metal oxide semiconductor process. Copyright (c) 2015 John Wiley & Sons, Ltd.

引用

页码：382 / 397

页数：16

共 15 条

[1] Design Methodology for Ultra Low-Power Analog Circuits using Next Generation BSIM6 Compact Model
Mangla, A.
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NANOTECHNOLOGY 2012, VOL 2: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, 2012, : 730 - 733
[2] Design methodology for ultra low-power analog circuits using next generation BSIM6 MOSFET compact model
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[3] Design methodology for low power RF LNA based on the figure of merit and the inversion coefficient
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[4] Design methodology for low power RF LNA based on the figure of merit and the inversion coefficient
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