Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas

被引：47
|
作者：
Kim, Woo-Hee [1 ]
Park, Sang-Joon [1 ]
Kim, Do Young [1 ]
Kim, Hyungjun [1 ]
机构：
[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2009年 / 55卷 / 01期
关键词：
Ru; RuO2; Atomic layer deposition; Growth characteristics; Films properties; Effects of oxygen exposure; Effects of growth temperature; Phase control; CHEMICAL-VAPOR-DEPOSITION; RUO2; METAL; MECHANISM; TA;
D O I：
10.3938/jkps.55.32
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In this study, the growth characteristics and the film properties of Ru and RuO2 thin films were systematically investigated, focusing on the effects of the oxygen exposure and the growth temperature. Pure Ru thin films with low resistivity were deposited from bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)(2)] as a Ru precursor and oxygen (O-2) as a reactant by using thermal atomic layer deposition (ALD). Phase change from Ru to RuO2 was observed by controlling the growth parameters, including the O-2 flow rate and the growth temperature. In order to investigate the dependence of the phase change on the deposition parameters, we evaluated the crystalline structure and the chemical composition by using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS).
引用
收藏
页码：32 / 37
页数：6
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