In-line Inspection of DRC Generated Hotspots

被引:0
|
作者
Srivastava, Amit [1 ]
Hoang Nguyen [1 ]
Hermann, Thomas [2 ]
Kirsch, Remo [2 ]
Kini, Rajeev [3 ]
机构
[1] GLOBALFOUNDRIES Inc, CFM, DFM, Malta, NY USA
[2] GLOBALFOUNDRIES Inc, CFM, DFM, Dresden, Germany
[3] KLA Tencor Inc, WIN, Dresden, Germany
关键词
DRC; NanoPoint; Design Hotspot; in-line defect inspection;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Design Hotspots are features on a silicon chip, which are susceptible to pattern failures. While multiple methods like DRC, ORC and CFM inspection are used to identify these Hotspots, in-line monitoring of these design Hotspots has remained a challenge. Existing methods of Hotspot inspection, which include API and EBI are not suited for large scale inspection due to system limitations and throughput limitations respectively. NanoPoint inspection, which is a recent advance in BBP inspection, has enabled in-line inspection of Design Hotspots at very high throughput. In this paper, a methodology for in-line inspection of Design Hotspots using NanoPoint BBP inspection is presented.
引用
收藏
页码:336 / 339
页数:4
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