In-line Inspection of DRC Generated Hotspots

被引：0

作者：

Srivastava, Amit ^{[1
]}

Hoang Nguyen ^{[1
]}

Hermann, Thomas ^{[2
]}

Kirsch, Remo ^{[2
]}

Kini, Rajeev ^{[3
]}

机构：

[1] GLOBALFOUNDRIES Inc, CFM, DFM, Malta, NY USA

[2] GLOBALFOUNDRIES Inc, CFM, DFM, Dresden, Germany

[3] KLA Tencor Inc, WIN, Dresden, Germany

来源：

2015 26TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC) | 2015年

关键词：

DRC; NanoPoint; Design Hotspot; in-line defect inspection;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Design Hotspots are features on a silicon chip, which are susceptible to pattern failures. While multiple methods like DRC, ORC and CFM inspection are used to identify these Hotspots, in-line monitoring of these design Hotspots has remained a challenge. Existing methods of Hotspot inspection, which include API and EBI are not suited for large scale inspection due to system limitations and throughput limitations respectively. NanoPoint inspection, which is a recent advance in BBP inspection, has enabled in-line inspection of Design Hotspots at very high throughput. In this paper, a methodology for in-line inspection of Design Hotspots using NanoPoint BBP inspection is presented.

引用

页码：336 / 339

页数：4

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