Long-wavelength In0.53Ga0.47As-In0.52Al0.48As large-area avalanche photodiodes and arrays

被引：17

作者：

Zheng, XG

Hsu, JS

Hurst, JB

Li, X

Wang, S

Sun, X

Holmes, AL

Campbell, JC ^{[1
]}

Huntington, AS

Coldren, LA

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

[2] Univ Calif Santa Barbara, Optoelect Technol Ctr, Dept Mat, Santa Barbara, CA 93106 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2004年 / 40卷 / 08期

关键词：

avalanche multiplication; avalanche photodiodes; excess noise factor; impact ionization; ionization coefficient; photodetectors; photodiode;

D O I：

10.1109/JQE.2004.831637

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Large-area (500-mum diameter) mesa-structure In0.53Ga0.47As-In0.52Al0.48As avalanche photodiodes (APDs) are reported. The dark current density was similar to 2.5 x 10(-2) nA/muM(2) at 90% of breakdown; low surface leakage current density (similar to4.2 pA/mum) was achieved with wet chemical etching and SiO2 passivation. An 18 x 18 APD array with uniform distributions of breakdown voltage, dark current, and multiplication gain has also been demonstrated. The APDs in the array achieved 3-dB bandwidth of similar to8 GHz at low gain and a gain-bandwidth product of similar to120 GHz.

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收藏

页码：1068 / 1073

页数：6

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