Molecular control of silicon-porous silicon-metal junctions

We attempt to understand the charge transport in Stable Silicon-Porous Silicon-Organic Molecules-Metal Devices. These are produced by surface modification of Porous Silicon by 1-Dodecyne molecules. The charge transport measurements (Current-Voltage) are made both for gold and aluminum as top contacts. Devices with aluminum show better rectification compared to gold, in the former the charge transport is dominated by the tunneling process (Fowler-Nordheim type). We propose a new band structure model to explain the present results.