Direct bonding of silicon and quartz glass using VUV/O3 activation and a multistep low-temperature annealing process

被引：44

作者：

Xu, Jikai ^{[1
]}

Wang, Chenxi ^{[1
]}

Wang, Te ^{[1
]}

Liu, Yannan ^{[1
]}

Tian, Yanhong ^{[1
]}

机构：

[1] Harbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150001, Heilongjiang, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2018年 / 453卷

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

Low-temperature bonding; Surface activation; Vacuum ultraviolet; Bonding interface; PLASMA ACTIVATION; OXYGEN; INTERFACES; FLUORINE; SI(100); FILMS; XPS;

D O I：

10.1016/j.apsusc.2018.05.109

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Low-temperature direct bonding is a promising method to integrate two or more dissimilar materials into one composite without large thermal stresses. In this paper, we describe a bonding process for silicon and quartz glass via vacuum ultraviolet/ozone (VUV/O-3) activation and a multistep, low-temperature annealing process. A strong bonding strength and a bonding interface without any microcracks were obtained after annealing at 200 degrees C. The surfaces and bonding interface were characterized. After the organic contaminants were removed by VUV/O-3, the treated surfaces were very hydrophilic. In addition, the VUV/O-3-induced surface oxidation increased, resulting in oxide asperities on the substrates. These newly generated surface asperities might possess a strong deformability based on the water stress corrosion effect, leading to gap closure after low-temperature annealing. Moreover, a model for the mechanism of the VUV/O-3-activated bonding was proposed.

引用

页码：416 / 422

页数：7

共 26 条

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