Cr-induced Perpendicular Magnetic Anisotropy and Field-Free Spin-Orbit-Torque Switching

被引：57

作者：

Chuang, T. C. ^{[1
]}

Pai, C. F. ^{[2
]}

Huang, S. Y. ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10617, Taiwan

来源：

PHYSICAL REVIEW APPLIED | 2019年 / 11卷 / 06期

关键词：

531 Metallurgy and Metallography - 543.1 Chromium and Alloys - 701.2 Magnetism: Basic Concepts and Phenomena - 804.2 Inorganic Compounds - 931.2 Physical Properties of Gases; Liquids and Solids;

D O I：

10.1103/PhysRevApplied.11.061005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Current-induced spin-orbit torque (SOT) driven magnetization switching has relied mostly on 4d and 5d heavy metals with strong spin-orbit coupling to generate large spin currents to deliver SOT and a MgO layer to acquire perpendicular magnetic anisotropy (PMA). We demonstrate 3d Cr metal can generate PMA and deliver SOT switching with more prowess than Ta. In certain Cr-based heterostructures, even field-free SOT switching has been achieved due to the subtle microstructure in the layered structure. The field-free SOT switching device based on 3d Cr provides significant advantages for next generation high-efficiency and low-cost nonvolatile spintronic devices.

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页数：7

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