Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy

被引：93

作者：

Koblmuller, G. ^{[1
]}

Gallinat, C. S.

Bernardis, S.

Speck, J. S.

Chern, G. D.

Readinger, E. D.

Shen, H.

Wraback, M.

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] USA, Res Lab, Sensors & Electron Devices Directorate, Adelphi, MD 20783 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 07期

关键词：

D O I：

10.1063/1.2335685

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors demonstrate the impact of growth kinetics on the surface and structural properties of N-face InN grown by molecular beam epitaxy. Superior surface morphology with step-flow growth features is achieved consistently under In-rich conditions in a low-temperature region of 500-540 degrees C. Remarkably, off-axis x-ray rocking curve (omega scans) widths are found to be independent of the growth conditions. The band gap determined from optical absorption measurements of optimized InN is 0.651 eV, while photoluminescence peak emission occurs at even lower energies of similar to 0.626 eV. Hall measurements show room temperature peak electron mobilities as high as 2370 cm(2)/V s at a carrier concentration in the low 10(17) cm(-3) region. Analysis of the thickness dependence of the carrier concentration demonstrates a n-type surface accumulation layer with a sheet carrier concentration of similar to 3x10(13) cm(-2). (c) 2006 American Institute of Physics.

引用

页数：3

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