3D imaging of semiconductor components by discrete laminography

被引:5
作者
Batenburg, K. J. [1 ,2 ]
Palenstijn, W. J. [2 ]
Sijbers, J. [2 ]
机构
[1] Ctr Wiskunde & Informat, POB 94079, NL-1090 GB Amsterdam, Netherlands
[2] Univ Antwerp, IMinds Vision Lab, B-2610 Antwerp, Belgium
来源
STRESS INDUCED PHENOMENA AND RELIABILITY IN 3D MICROELECTRONICS | 2014年 / 1601卷
关键词
Laminography; discrete tomography; TOTAL-VARIATION MINIMIZATION; DIGITAL TOMOSYNTHESIS; RECONSTRUCTION; TOMOGRAPHY; REMOVAL;
D O I
10.1063/1.4881350
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
X-ray laminography is a powerful technique for quality control of semiconductor components. Despite the advantages of nondestructive 3D imaging over 2D techniques based on sectioning, the acquisition time is still a major obstacle for practical use of the technique. In this paper, we consider the application of Discrete Tomography to laminography data, which can potentially reduce the scanning time while still maintaining a high reconstruction quality. By incorporating prior knowledge in the reconstruction algorithm about the materials present in the scanned object, far more accurate reconstructions can be obtained from the same measured data compared to classical reconstruction methods. We present a series of simulation experiments that illustrate the potential of the approach.
引用
收藏
页码:168 / 179
页数:12
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