Electrochemical Formation of Ordered Pore Arrays in InP in KCl

被引：10
作者：
Quill, N. [1 ,2 ]
Lynch, R. P. [1 ,2 ]
O'Dwyer, C. [3 ]
Buckley, D. N. [1 ,2 ]
机构：
[1] Univ Limerick, Dept Phys & Energy, Limerick, Ireland
[2] Univ Limerick, Mat & Surf Sci Inst, Limerick, Ireland
[3] Univ Coll Cork, Tyndall Natl Inst, Dept Chem, Cork Ireland & Micro Nanoelect Ctr, Cork, Ireland
来源：
LOW-DIMENSIONAL NANOSCALE ELECTRONIC AND PHOTONIC DEVICES 5 -AND- STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 54 (SOTAPOCS 54) | 2012年 / 50卷 / 06期
关键词：
CRYSTAL ORIENTATION; N-INP; GROWTH; OSCILLATIONS; ANODIZATION; DEPENDENCE; MORPHOLOGY; INITIATION; SURFACES;
D O I：
10.1149/05006.0377ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Pores are formed electrochemically in n-InP in KCl electrolytes with concentrations of 2 mol dm(-3) or greater. The pore morphology is similar to what is seen in other halide-based electrolytes. At low potentials, crystallographically oriented (CO) pores are formed. At higher potentials, current-line oriented (CLO) pores are formed. Crystallographically oriented pore walls are observed for both pore morphologies. When formed at a constant current, potential oscillations are observed which have been correlated to oscillations in the pore width. The CLO pore wall smoothness and overall uniformity increase as KCl concentration is increased. The porous structures formed in KCl compare favourably with those formed in the more acidic or alkaline electrolytes that are typically used to form these structures.
引用
收藏
页码：377 / 392
页数：16
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    Schmuki, P
    [J]. SURFACE SCIENCE, 2003, 547 (03) : 268 - 274
  • [32] Anodic etching of InP using neutral NaCl electrolyte
    Weng, Zhankun
    Liu, Aimin
    Sang, Yongchang
    Zhang, Jiquan
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    Liu, Weifeng
    [J]. JOURNAL OF POROUS MATERIALS, 2009, 16 (06) : 707 - 713
  • [33] Morphology and formation mechanisms of porous silicon
    Zhang, XG
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (01) : C69 - C80
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