Relaxation of electron energy in the polar semiconductor double quantum dots

被引：0
|
作者：
Král, K
Khás, Z
Zdenek, P
Cernansky, M
Lin, CY
机构：
[1] Acad Sci Czech Republ, Inst Phys, Prague 18221 8, Czech Republic
[2] Natl Chung Hsing Univ, Dept Phys, Taichung 40227, Taiwan
来源：
PHYSICA B-CONDENSED MATTER | 2002年 / 316卷
关键词：
quantum dots; relaxation; double quantum dots; electron-phonon interaction;
D O I：
10.1016/S0921-4526(02)00458-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Electron energy relaxation in the asymmetric double quantum dot system is calculated numerically using the material parameters of GaAs. The double dot consists of two tunneling coupled quantum dots each having a single nondegenerate electronic orbital. The effect of the intradot multiple scattering of the electron on the longitudinal optical phonons is considered. The inter-dot interaction is provided by the electronic tunneling mechanism. The dependence of the relaxation rate on the thickness of the tunneling barrier and on the temperature is calculated. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：202 / 204
页数：3
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