Van der Waals epitaxial MOCVD-growth of (BixSb1-x)2Te3 (0 < x < 1) films

被引：6

作者：

Bendt, G. ^{[1
,2
]}

Sonntag, J. ^{[3
,4
]}

Lorke, A. ^{[3
,4
]}

Assenmacher, W. ^{[5
]}

Hagemann, U. ^{[6
]}

Schulz, S. ^{[1
,2
]}

机构：

[1] Univ Duisburg Essen, Inst Inorgan Chem, D-45117 Essen, Germany

[2] Univ Duisburg Essen, Ctr Nanointegrat Duisburg Essen CENIDE, D-45117 Essen, Germany

[3] Univ Duisburg Essen, Fac Phys, D-47048 Duisburg, Germany

[4] Univ Duisburg Essen, Ctr Nanointegrat Duisburg Essen CENIDE, D-47048 Duisburg, Germany

[5] Univ Bonn, Inst Inorgan Chem, D-53117 Bonn, Germany

[6] NETZ, Interdisciplinary Ctr Analyt Nanoscale, D-47047 Duisburg, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2015年 / 30卷 / 08期

关键词：

Van der Waals epitaxy; MOCVD; topological insulators; thermoelectroic materials; (BixSb1-x)(2)Te-3; HIGH-THERMOELECTRIC PERFORMANCE; VAPOR-PHASE EPITAXY; SINGLE DIRAC CONE; FIGURE-OF-MERIT; THIN-FILMS; TOPOLOGICAL-INSULATOR; BISMUTH; BI2TE3; SB2TE3; ELECTRODEPOSITION;

D O I：

10.1088/0268-1242/30/8/085021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial (BixSb1-x)(2)Te-3 films with (0 < x < 1) were grown by the metal-organic chemical vapour deposition (MOCVD) process at 400 degrees C using the tailor-made precursors Et2Te2, i-Pr3Sb and Et3Bi. The films grown on Al2O3(0001) substrates show a very smooth surface morphology as shown by a scanning electron microscope (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM), while those grown on Si(100) are rather polycrystalline. The chemical composition of the crystalline films (x-ray powder diffraction (XRD)) was investigated by energy-dispersive x-ray (EDX) and x-ray photoelectron spectroscopy (XPS), and the in-plane transport properties were measured, and a strong dependency from the bismuth content was found, which allows the tuning of the carrier concentration and mobility in a wide range.

引用

页数：8

共 70 条

[1] Growth of (Bi1-xSbx)2Te3 thin films by metal-organic chemical vapour deposition [J].