Dynamic observation of Si-island growth on a Si(111)-7x7 surface by high-temperature scanning tunneling microscopy

被引:9
|
作者
Hasegawa, T
Shimada, W
Tochihara, H
Hosoki, S
机构
[1] HOKKAIDO UNIV,INST LOW TEMP SCI,SAPPORO,HOKKAIDO 060,JAPAN
[2] HOKKAIDO UNIV,CTR CATALYSIS RES,SAPPORO,HOKKAIDO 060,JAPAN
关键词
D O I
10.1016/0022-0248(95)00492-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Si-island growth on a Si(111)-7 x 7 surface was studied at 350 degrees C in situ using high-temperature scanning tunneling microscopy. At the beginning of growth, deposited Si atoms formed small amorphous clusters within each triangular subunit of the 7 x 7 structure. The amorphous clusters grew, and crystallized islands also appeared as the quantity of deposited Si atoms increased. At the domain boundaries of the 7 x 7 structure, islands tended to begin forming on the unfaulted half of the 7 x 7 structure. These phenomena indicate that cancellation of the stacking fault on the substrate surface dominates island growth.
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页码:314 / 318
页数:5
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