Elemental Topological Insulator with Tunable Fermi Level: Strained α-Sn on InSb(001)

被引：135

作者：

Barfuss, A. ^{[1
,2
]}

Dudy, L. ^{[1
,2
]}

Scholz, M. R. ^{[1
,2
]}

Roth, H. ^{[1
,2
]}

Hoepfner, P. ^{[1
,2
]}

Blumenstein, C. ^{[1
,2
]}

Landolt, G. ^{[3
,4
]}

Dil, J. H. ^{[3
,4
]}

Plumb, N. C. ^{[3
]}

Radovic, M. ^{[3
]}

Bostwick, A. ^{[5
]}

Rotenberg, E. ^{[5
]}

Fleszar, A. ^{[6
]}

Bihlmayer, G. ^{[7
,8
]}

Wortmann, D. ^{[7
,8
]}

Li, G. ^{[6
]}

Hanke, W. ^{[6
]}

Claessen, R. ^{[1
,2
]}

Schaefer, J. ^{[1
,2
]}

机构：

[1] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

[2] Univ Wurzburg, Rontgen Ctr Complex Mat Syst, D-97074 Wurzburg, Germany

[3] Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland

[4] Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland

[5] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

[6] Univ Wurzburg, Inst Theoret Phys & Astron, D-97074 Wurzburg, Germany

[7] Forschungszentrum Julich, Peter Grunberg Inst, D-52425 Julich, Germany

[8] Forschungszentrum Julich, Inst Adv Simulat, D-52425 Julich, Germany

来源：

PHYSICAL REVIEW LETTERS | 2013年 / 111卷 / 15期

关键词：

HGTE QUANTUM-WELLS; SINGLE DIRAC CONE; RESOLVED PHOTOEMISSION; HETEROEPITAXIAL FILMS; PSEUDOMORPHIC GROWTH; ELECTRONIC-STRUCTURE; BAND STRUCTURE; SURFACE; BI2TE3; INSB;

D O I：

10.1103/PhysRevLett.111.157205

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on the epitaxial fabrication and electronic properties of a topological phase in strained alpha-Sn on InSb. The topological surface state forms in the presence of an unusual band order not based on direct spin-orbit coupling, as shown in density functional and GW slab-layer calculations. Angle-resolved photoemission including spin detection probes experimentally how the topological spin-polarized state emerges from the second bulk valence band. Moreover, we demonstrate the precise control of the Fermi level by dopants.

引用

页数：5

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