Elemental Topological Insulator with Tunable Fermi Level: Strained α-Sn on InSb(001)

被引：135

作者：

Barfuss, A. ^{[1
,2
]}

Dudy, L. ^{[1
,2
]}

Scholz, M. R. ^{[1
,2
]}

Roth, H. ^{[1
,2
]}

Hoepfner, P. ^{[1
,2
]}

Blumenstein, C. ^{[1
,2
]}

Landolt, G. ^{[3
,4
]}

Dil, J. H. ^{[3
,4
]}

Plumb, N. C. ^{[3
]}

Radovic, M. ^{[3
]}

Bostwick, A. ^{[5
]}

Rotenberg, E. ^{[5
]}

Fleszar, A. ^{[6
]}

Bihlmayer, G. ^{[7
,8
]}

Wortmann, D. ^{[7
,8
]}

Li, G. ^{[6
]}

Hanke, W. ^{[6
]}

Claessen, R. ^{[1
,2
]}

Schaefer, J. ^{[1
,2
]}

机构：

[1] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

[2] Univ Wurzburg, Rontgen Ctr Complex Mat Syst, D-97074 Wurzburg, Germany

[3] Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland

[4] Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland

[5] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

[6] Univ Wurzburg, Inst Theoret Phys & Astron, D-97074 Wurzburg, Germany

[7] Forschungszentrum Julich, Peter Grunberg Inst, D-52425 Julich, Germany

[8] Forschungszentrum Julich, Inst Adv Simulat, D-52425 Julich, Germany

来源：

PHYSICAL REVIEW LETTERS | 2013年 / 111卷 / 15期

关键词：

HGTE QUANTUM-WELLS; SINGLE DIRAC CONE; RESOLVED PHOTOEMISSION; HETEROEPITAXIAL FILMS; PSEUDOMORPHIC GROWTH; ELECTRONIC-STRUCTURE; BAND STRUCTURE; SURFACE; BI2TE3; INSB;

D O I：

10.1103/PhysRevLett.111.157205

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on the epitaxial fabrication and electronic properties of a topological phase in strained alpha-Sn on InSb. The topological surface state forms in the presence of an unusual band order not based on direct spin-orbit coupling, as shown in density functional and GW slab-layer calculations. Angle-resolved photoemission including spin detection probes experimentally how the topological spin-polarized state emerges from the second bulk valence band. Moreover, we demonstrate the precise control of the Fermi level by dopants.

引用

页数：5

共 30 条

[1] Elemental Topological Dirac Semimetal: α-Sn on InSb(111)
Xu, Cai-Zhi
Chan, Yang-Hao
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Kee, Hae-Young
Tamura, Nobumichi
Chou, Mei-Yin
Hussain, Zahid
Mo, Sung-Kwan
Chiang, Tai-Chang
PHYSICAL REVIEW LETTERS, 2017, 118 (14)
[2] Topological surface state of α-Sn on InSb(001) as studied by photoemission
Scholz, M. R.
Rogalev, V. A.
Dudy, L.
Reis, F.
Adler, F.
Aulbach, J.
Collins-McIntyre, L. J.
Duffy, L. B.
Yang, H. F.
Chen, Y. L.
Hesjedal, T.
Liu, Z. K.
Hoesch, M.
Muff, S.
Dil, J. H.
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PHYSICAL REVIEW B, 2018, 97 (07)
[3] Scanning tunneling microscopy of strained-α-Sn(001) surface grown on InSb(001) substrate
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[4] Fermi level dependent spin pumping from a magnetic insulator into a topological insulator
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[5] Fermi-level tuning of topological insulator thin films
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Japanese Journal of Applied Physics, 2013, 52 (11 PART 1):
[6] Fermi level engineering of topological insulator films by tuning the substrates
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[8] Fermi-Level Tuning of Topological Insulator Thin Films
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[10] Thickness-dependent topological phase transition and Rashba-like preformed topological surface states of α-Sn(001) thin films on InSb(001)
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