Effect of oxygen ambient on structural, optical and electrical properties of epitaxial Al-doped ZnO thin films on r-plane sapphire by pulsed laser deposition

被引：23
作者：
Kumar, Manoj [1 ]
Mehra, R. M. [2 ]
Choi, Se-Young [1 ]
机构：
[1] Yonsei Univ, Dept New Mat Sci & Engn, Seoul 120749, South Korea
[2] Univ Delhi, Dept Elect Sci, New Delhi 110021, India
来源：
CURRENT APPLIED PHYSICS | 2009年 / 9卷 / 04期
关键词：
Epitaxial ZnO:Al films; r-Plane sapphire; Pulsed laser deposition; MOLECULAR-BEAM EPITAXY; CHEMICAL-VAPOR-DEPOSITION; PHASE EPITAXY; NONPOLAR ZNO; GROWTH; PHOTOLUMINESCENCE; SUBSTRATE; LAYER; GAN;
D O I：
10.1016/j.cap.2008.07.002
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Al-doped ZnO (ZnO:Al) thin films were grown epitaxially on r-plane sapphire substrate by pulsed laser deposition. Substrate temperature of 400 degrees C and pulsed repetition rate of 5 Hz was kept constant during the deposition. The effect of oxygen ambient pressure from 0.1 to 10 mTorr on structural, optical and electrical properties of the ZnO:Al films were investigated. The lowest resistivity was found to be 2.14 x 10(-3) Omega-cm with a carrier concentration of 6.89 x 10(19) cm(-3) for the film deposited in 1 mTorr of oxygen pressure. ZnO:Al film revealed smoother surface obtained at oxygen ambient pressure of 1 mTorr. The epitaxial relationship between ZnO:Al films and r-plane sapphire was found to be (0001)(Zno) / / (01 (1) over bar2)(sapp) and [10 (1) over bar0](Zno) / / [0 (1) over bar 11](sapp). Photoluminescence spectra of the film grown at the oxygen ambient pressure of I mTorr exhibited peak at 3.34 eV, without any deep level. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：737 / 741
页数：5
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