Design and Analysis of Millimeter Wave Double F Slot Patch Antenna for future 5G Wireless Communication

被引：0

作者：

Ahmad, Farhan ^{[1
]}

Tlili, Boutheina ^{[1
]}

机构：

[1] Rochester Inst Technol, Elect Engn Dept, Dubai, U Arab Emirates

来源：

2017 INTERNATIONAL CONFERENCE ON ELECTRICAL AND COMPUTING TECHNOLOGIES AND APPLICATIONS (ICECTA) | 2017年

关键词：

Millimeter wave; Patch antenna; V-Band; 5G; 60; GHZ;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper a low cost, compact and highly flexible Double F-slot microstrip patch antenna has been designed for future 5G communication systems. For high data transmission a low resistivity silicon substrate is used having relative permittivity of 11.9, thickness of 0.275 mm and tangent loss of 0.002. The proposed antenna has an extension to Inverted U shape slotted patch antenna discussed in this paper. The designed Double F-Slot antenna is used for millimeter wave band operating at 58.10 GHz Unlicensed V-Band applications. It is observed that Directivity and Gain of Double F-slot patch antenna are 7.55 dBi and 5.99 dBi, respectively. The matching between microstrip antenna and 75 ohm microstrip line is achieved by inset feed technique. The presented approach in this paper offers major advantages in millimeter wave applications such as radio, television, satellite and radar. Simulations are accomplished in Advance design system (ADS) by Agilent.

引用

页码：712 / 715

页数：4

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