Unexpected High-Temperature Stability of β-Zn4Sb3 Opens the Door to Enhanced Thermoelectric Performance

被引:110
|
作者
Lin, Jianping [1 ]
Li, Xudong [2 ]
Qiao, Guanjun [1 ,3 ]
Wang, Zhao [2 ]
Carrete, Jesus [4 ]
Ren, Yang [5 ]
Ma, Lingzhi [1 ]
Fei, Youjian [1 ]
Yang, Baifeng [1 ]
Lei, Lei [1 ]
Li, Ju [2 ,6 ,7 ]
机构
[1] Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China
[2] Xi An Jiao Tong Univ, Frontier Inst Sci & Technol, Xian 710049, Peoples R China
[3] Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang 212013, Peoples R China
[4] CEA Grenoble, F-38000 Grenoble, France
[5] Argonne Natl Lab, Adv Photon Source, Xray Sci Div, Argonne, IL 60439 USA
[6] MIT, Dept Nucl Sci & Engn, Cambridge, MA 02139 USA
[7] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
基金
中国国家自然科学基金;
关键词
ZINC ANTIMONIDE; INTERSTITIAL ZN; ZN4SB3; DENSITY; FIGURE;
D O I
10.1021/ja410605f
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
beta-Zn4Sb3 has one of the highest ZT reported for binary compounds, but its practical applications have been hindered by a reported poor stability. Here we report the fabrication of nearly dense single-phase beta-Zn4Sb3 and a study of its thermoelectric transport coefficients across a wide temperature range. Around 425 K we find an abrupt decrease of its thermal conductivity. Past this point, Zn atoms can migrate from crystalline sites to interstitial positions; beta-Zn4Sb3 becomes metastable and gradually decomposes into Zn(hcp) and ZnSb. However, above 565 K. it recovers its stability; in fact, the damage caused by decomposition can be repaired completely. This is key to its excellent thermoelectric performance at high temperature: the maximum ZT reaches 1.4. Molecular dynamics simulations are used to shed light on the microscopic behavior of the material.
引用
收藏
页码:1497 / 1504
页数:8
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