Structural and optical properties of In-doped ZnO thin films under wet annealing

被引：14

作者：

Ooi, P. K. ^{[1
]}

Ng, S. S. ^{[1
]}

Abdullah, M. J. ^{[1
]}

Hassan, Z. ^{[1
]}

机构：

[1] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res & Technol Lab, George Town 11800, Malaysia

来源：

MATERIALS LETTERS | 2014年 / 116卷

关键词：

In-doped ZnO; Sputtering; Thin films; Wet annealing; ELECTRICAL-PROPERTIES;

D O I：

10.1016/j.matlet.2013.11.088

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium-doped zinc oxide (In-doped ZnO) thin films were deposited on silicon substrates by radio frequency magnetron co-sputtering of ZnO and In targets. The effects of wet annealing at various temperatures on the films were investigated. All the films had a hexagonal wurtzite structure with preferred c-axis orientations. The crystal structure of the films was improved as the wet annealing temperature was increased to 800 degrees C and then deteriorated at 900 degrees C due to the presence of cracks and porosity. The surface morphologies of the films changed significantly as the wet annealing temperature reached above 800 degrees C. Besides that, strong emission at near-band-edge of ZnO and green emission were observed as the annealing temperature increased. Overall, In-doped ZnO thin film annealed at 800 degrees C has the best structural and optical properties. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：396 / 398

页数：3

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