The Design and Calculation of X-band Broadband CW Klystron

被引：0
|
作者：
Ding, Yaogen [1 ]
Xue, Ming [1 ]
Ding, Haibing [1 ]
Zhang, Zhiqiang [1 ]
机构：
[1] Chinese Acad Sci, Inst Elect, Key Lab High Power Microwave Sources & Technol, 19 Beisihuan Xilu, Beijing 100190, Peoples R China
来源：
2018 IEEE INTERNATIONAL VACUUM ELECTRONICS CONFERENCE (IVEC) | 2018年
关键词：
High power klystrons; bandwidth; beam filling factor; beam perveance;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The bandwidth of the high power klystron strongly depends on its output power level. Usually, the relative bandwidth is about 1 similar to 2% for X-band CW klystron with output power of several kilowatts. The relative bandwidth of 3 similar to% is required for some application for 5kW X-band CW klystron. In this paper, the design and calculation of the X-band klystron are presented. By optimizing the parameters of electron beam and RF interaction section, the relative bandwidth of 4%, efficiency of 25%, gain of 25dB have been obtained for 5kW X-band CW klystron at beam voltage of 14kV and beam current of 1.66A. The influence of beam filling factor and radius of beam channel on the efficiency-frequency characteristics are described and discussed.
引用
收藏
页码：105 / 106
页数：2
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