The Effect of Hydrogen Doping on the Electrochemical Etching of Ion-Irradiated n-Type Silicon

被引：1

作者：

Liang, H. D. ^{[1
,2
]}

Breese, M. B. H. ^{[1
,3
]}

Duttagupta, S. ^{[4
]}

Aberle, A. G. ^{[4
]}

Bettiol, A. A. ^{[1
,3
,5
]}

Venkatesan, T. ^{[2
,3
,6
,7
,8
]}

机构：

[1] Natl Univ Singapore, Dept Phys, CIBA, Singapore 117542, Singapore

[2] Natl Univ Singapore, NUSNNI Nanocore, Singapore 117411, Singapore

[3] Natl Univ Singapore, Dept Phys, Singapore, Singapore

[4] Natl Univ Singapore, SERIS, Singapore 117574, Singapore

[5] Yale NUS Coll, Singapore 138527, Singapore

[6] Natl Univ Singapore, Elect & Comp Sci Dept, Singapore, Singapore

[7] Natl Univ Singapore, Mat Sci & Engn Dept, Singapore, Singapore

[8] Natl Univ Singapore, Dept Integrat Sci & Engn, Singapore, Singapore

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2018年 / 7卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

DEEP LEVELS; NITRIDE;

D O I：

10.1149/2.0141808jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have developed a model to account for the effects of MeV proton irradiation and annealing on the doping profile of crystalline n-type silicon, and how this alters the formation of porous silicon during subsequent electrochemical anodization. Based on this model, we have developed a machining process using MeV proton irradiation. The hydrogen-doping during irradiation in n-type silicon allows selective modification of the doping profile only at the ion end-of-range. This allows formation of buried, hollow channels in porous silicon without any influence of the defect profile introduced above this region, which limits this process in p-type silicon. (C) 2018 The Electrochemical Society.

引用

页码：N110 / N113

页数：4

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