The Effect of Hydrogen Doping on the Electrochemical Etching of Ion-Irradiated n-Type Silicon

被引：1
|
作者：
Liang, H. D. [1 ,2 ]
Breese, M. B. H. [1 ,3 ]
Duttagupta, S. [4 ]
Aberle, A. G. [4 ]
Bettiol, A. A. [1 ,3 ,5 ]
Venkatesan, T. [2 ,3 ,6 ,7 ,8 ]
机构：
[1] Natl Univ Singapore, Dept Phys, CIBA, Singapore 117542, Singapore
[2] Natl Univ Singapore, NUSNNI Nanocore, Singapore 117411, Singapore
[3] Natl Univ Singapore, Dept Phys, Singapore, Singapore
[4] Natl Univ Singapore, SERIS, Singapore 117574, Singapore
[5] Yale NUS Coll, Singapore 138527, Singapore
[6] Natl Univ Singapore, Elect & Comp Sci Dept, Singapore, Singapore
[7] Natl Univ Singapore, Mat Sci & Engn Dept, Singapore, Singapore
[8] Natl Univ Singapore, Dept Integrat Sci & Engn, Singapore, Singapore
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2018年 / 7卷 / 08期
基金：
新加坡国家研究基金会;
关键词：
DEEP LEVELS; NITRIDE;
D O I：
10.1149/2.0141808jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have developed a model to account for the effects of MeV proton irradiation and annealing on the doping profile of crystalline n-type silicon, and how this alters the formation of porous silicon during subsequent electrochemical anodization. Based on this model, we have developed a machining process using MeV proton irradiation. The hydrogen-doping during irradiation in n-type silicon allows selective modification of the doping profile only at the ion end-of-range. This allows formation of buried, hollow channels in porous silicon without any influence of the defect profile introduced above this region, which limits this process in p-type silicon. (C) 2018 The Electrochemical Society.
引用
收藏
页码：N110 / N113
页数：4
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