High Peak Current MOS Gate-Triggered Thyristor With Fast Turn-On Characteristics for Solid-State Closing Switch Applications

被引:26
|
作者
Chen, Wanjun [1 ]
Liu, Chao [1 ]
Tang, Xuefeng [1 ]
Lou, Lunfei [1 ]
Cheng, Wu [1 ]
Zhou, Qi [1 ]
Li, Zhaoji [1 ]
Zhang, Bo [1 ]
机构
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
基金
中国国家自然科学基金;
关键词
Pulse power; closing switch; peak current; turn-on speed; PULSED-POWER; CAPABILITY; DESIGN;
D O I
10.1109/LED.2015.2511182
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this letter, a MOS gate-triggered thyristor (MGTT) structure with alternating MOS and p-n-p-n thyristor sections is proposed and fabricated with the state-of-the-art commercial insulated gate bipolar transistor (IGBT) process. This structure introduces a p-n-p-n thyristor between the adjacent MOS cells, which brings about strong conductivity modulation in N-drift region and, consequently, ultralow on-state resistance due to the regenerative feedback mechanism. Thus, the proposed MGTT exhibits high peak current (I-peak) and high current rise rate (di/dt). Furthermore, the regenerative feedback mechanism in combination with MOS gate-triggered operation contributes to fast turn-ON speed and high repetition rate. The experimental results show that the fabricated MGTT exhibits an I-peak of 5.2 kA and a di/dt of 15.8 kA/mu s, as well as high-frequency repetition of up to 20 Hz. The excellent device performance, coupled with a commercial IGBT-compatible fabrication process, makes the proposed MGTT a promising candidate for pulse power applications.
引用
收藏
页码:205 / 208
页数:4
相关论文
共 9 条
  • [1] High Current Switching Capabilities of a 3000 V SiC Thyristor for Fast Turn-on Applications
    Sanders, Jason M.
    Elasser, Ahmed
    Soloviev, Stanislav
    2016 IEEE INTERNATIONAL POWER MODULATOR AND HIGH VOLTAGE CONFERENCE (IPMHVC), 2016, : 48 - 51
  • [2] High Voltage Insulated Gate Trigger Thyristor With High-Efficiency Injection for Fast Turn-on and High Current Pulse
    Liu, Chao
    Chen, Wanjun
    Sun, Ruize
    Shi, Yijun
    Zhou, Qi
    Li, Zhaoji
    Zhang, Bo
    IEEE ELECTRON DEVICE LETTERS, 2019, 40 (12) : 1965 - 1968
  • [3] Combined Solid-State Closing Switch for High-Current Pulse Switching
    Orlov, A. P.
    Golyakov, P. I.
    Vlasov, Yu. V.
    Repin, P. B.
    TECHNICAL PHYSICS, 2024, 69 (07) : 2074 - 2078
  • [4] Operation characteristics of emitter turn-off thyristor (ETO) for solid-state circuit breaker and fault current limiter
    Chen, B
    Huang, AQ
    Baran, M
    Han, C
    Song, WC
    APEC 2006: TWENTY-FIRST ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1-3, 2006, : 174 - 178
  • [5] A Study on Semiconductor Switch Characteristics for a High Repetitive Fast Rising Solid-State Modulator
    Song, Seung-Ho
    Ahn, Jae-Beom
    Ryoo, Hong-Je
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 2022, 50 (09) : 3022 - 3028
  • [6] A Novel Current-Balancing Method for Paralleled MOSFETs in High-Current Solid-State Switch Applications
    Marzoughi, Alinaghi
    Bahei-Eldin, Khaled
    IEEE POWER ELECTRONICS MAGAZINE, 2020, 7 (01): : 20 - 27
  • [7] A 50 kJ Inductive-Capacitive Storage Module With Solid-State High-Power Opening Switch Based on Counter-Current Thyristor
    Wang, Haiyang
    Xie, Linshen
    Zhang, Guowei
    He, Xiaoping
    Chen, Zhiqiang
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 2015, 43 (08) : 2658 - 2662
  • [8] High speed turn-on reverse conducting 4 kV static induction thyristors based on the buried gate type p-base n-emitter soft contact structure and anti-parallel diodes for solid-state power supplies in high energy accelerators
    Shimizu, N.
    Miyoshi, M.
    Tange, S.
    Sekiya, T.
    Ito, T.
    Sakuma, T.
    Sakurai, T.
    Terasawa, T.
    Hatano, M.
    Hotta, S.
    Imanishi, Y.
    Okimoto, A.
    Asai, M.
    Oda, O.
    Nishizawa, J.
    SOLID-STATE ELECTRONICS, 2006, 50 (9-10) : 1567 - 1578
  • [9] A 26 W 97%-Efficiency Fast-Settling Dimmable LED Driver With Dual-nMOS-Sensing Based Glitch-Tolerant Synchronous Current Control for High-Brightness Solid-State Lighting Applications
    Liu, Zhidong
    Lee, Hoi
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2015, 50 (09) : 2174 - 2187