A Low Power Self-Turnoff Program Method for One-Time Programmable Memory

被引：0
作者：
Shen, Ling [1 ]
Zheng, Yongan [1 ]
Yang, Fan [1 ]
Liao, Huailin [1 ]
Wang, Yangyuan [1 ]
机构：
[1] Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, MOE, Beijing 100871, Peoples R China
来源：
2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2016年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel self-turnoff control circuit for program process of one-time programmable (OTP) cell is proposed. Utilizing the current turnoff technology after the breakdown of OTP cell, it lowers the power consumption efficiently compared with traditional structures without turnoff mechanism. In addition, an additional delay circuit is also attached to the self-turnoff circuit to ensure the complete breakdown of OTP cell. The simulation results show that the average power consumption of proposed circuit decreases to about 3nA in the whole program process.
引用
收藏
页码：579 / 581
页数：3
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