Fast epitaxial growth of thick 4H-SiC with specular surface by chimney-type vertical hot-wall chemical vapor deposition

被引：4
作者：
Fujiwara, H
Danno, K
Kimoto, T
Tojo, T
Matsunami, H
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan
[2] Dept Tech & Dev, Kagawa 7691612, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2 | 2004年 / 457-460卷
关键词：
vertical hot-wall CVD; micropipe closing; photoluminescence; fast epitaxy;
D O I：
10.4028/www.scientific.net/MSF.457-460.205
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Fast epitaxial growth of 4H-SiC epilayers at high temperatures has been investigated in a chimney-type vertical hot-wall chemical vapor deposition (CVD), which has enabled a high growth rate up to 44 mum/h with mirror-like surface morphology. The C/Si ratio dependencies of micropipe closing ratio, doping concentration and photoluminescence (PL) spectra have been investigated. High micropipe closing ratio of 94 similar to 100 % and low doping concentration of 6.7 x 10(12) cm(-3) have been achieved at a high growth rate of 19 mum/h. A 51 mum-thick epilayer grown at 36 mum/h led to produce high-voltage Ni SBDs (Schottky Barrier Diode) with a small ideality factor of 1.1 and a breakdown voltage of 3420 V.
引用
收藏
页码：205 / 208
页数：4
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