Exploring Light-Matter Interaction Phenomena under Ultrastrong Coupling Regime

被引:159
作者
Gambino, Salvatore [1 ,3 ]
Mazzeo, Marco [2 ,3 ]
Genco, Armando [3 ]
Di Stefano, Omar [4 ]
Savasta, Salvatore [4 ]
Patane, Salvatore [4 ]
Ballarini, Dario [3 ]
Mangione, Federica [3 ]
Lerario, Giovanni [1 ,2 ]
Sanvitto, Daniele [3 ]
Gigli, Giuseppe [1 ,2 ,3 ]
机构
[1] Ist Italian Tecnol, CBN, I-73010 Lecce, Italy
[2] Univ Salento, Dipartimento Matemat & Fis Ennio De Giorgi, Via Arnesano, I-73100 Lecce, Italy
[3] Ist Nanosci CNR, NNL, I-73100 Lecce, Italy
[4] Univ Messina, Dipartimento Fis & Sci & Terra, I-98166 Messina, Italy
关键词
polaritons; light-matter interactions; Rabi splitting; ultrastrong coupling; organic microcavities; organic light-emitting diodes; BOSE-EINSTEIN CONDENSATION; POLARITONS; EXCITONS; MICROCAVITY;
D O I
10.1021/ph500266d
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Exciton-polaritons are bosonic quasiparticles that arise from the normal mode splitting of photons in a microcavity and excitons in a semiconductor material. One of the most intriguing extensions of such a lightmatter interaction is the so-called ultrastrong coupling regime. It is achieved when the Rabi frequency (Omega(R), the energy exchange rate between the emitter and the resonant photonic mode) reaches a considerable fraction of the emitter transition frequency, omega(0). Here, we report a Rabi energy splitting (2h Omega(R)) of 1.12 eV and record values of the coupling ratio (2 Omega(R)/omega(0)) up to 0.6-fold the material band gap in organic semiconductor microcavities and up to 0.5-fold in monolithic heterostructure organic light-emitting diodes working at room temperature. Furthermore, we show that with such a large coupling strength it is possible to undress the exciton homogeneous linewidth from its inhomogeneous broadening, which allows for an unprecedented narrow emission line (below the cavity finesse) for such organic LEDs. The latter can be exploited for the realization of novel monochromatic sources and near-IR organic emitting devices
引用
收藏
页码:1042 / 1048
页数:7
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