Growth and characterization of ferroelectric Pb(Zr, Ti)O-3 films on interface-controlled CeO2(111)/Si(111)

Pb(Zr0.52Ti0.48)O-3(PZT)/CeO2 films were grown on Si(111) substrates Ly the pulsed laser deposition method. Room-temperature (20 degrees C) deposition of the CeO2 film on a hydrogen-terminated Si surface resulted in a sharp hetero-interface sith no amorphous transition layer. PZT films were grown on the CeO2 layer in {101} orientation with in-plane three directions at substrate temperatures higher than 450 degrees C. An Al/PZT(80 nm)/CeO2 (24 nm)/Si structure showed a threshold voltage shift as large as 1.6 V (when bias voltage was 3 V) in a capacitance-voltage (C-V) curve due to the surface charges induced by ferroelectric polarization of the PZT film.