Growth and characterization of ferroelectric Pb(Zr, Ti)O-3 films on interface-controlled CeO2(111)/Si(111)

被引：10
|
作者：
Lee, MB [1 ]
Ohnishi, T [1 ]
Maeda, T [1 ]
Kawasaki, M [1 ]
Yoshimoto, M [1 ]
Koinuma, H [1 ]
机构：
[1] TOKYO INST TECHNOL,MAT & STRUCT LAB,YOKOHAMA,KANAGAWA 226,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 10期
关键词：
Pb/Zr0.52Ti0.48)O-3; CeO2; pulsed laser deposition; MFIS; ferroelectric polarization;
D O I：
10.1143/JJAP.36.6500
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Pb(Zr0.52Ti0.48)O-3(PZT)/CeO2 films were grown on Si(111) substrates Ly the pulsed laser deposition method. Room-temperature (20 degrees C) deposition of the CeO2 film on a hydrogen-terminated Si surface resulted in a sharp hetero-interface sith no amorphous transition layer. PZT films were grown on the CeO2 layer in {101} orientation with in-plane three directions at substrate temperatures higher than 450 degrees C. An Al/PZT(80 nm)/CeO2 (24 nm)/Si structure showed a threshold voltage shift as large as 1.6 V (when bias voltage was 3 V) in a capacitance-voltage (C-V) curve due to the surface charges induced by ferroelectric polarization of the PZT film.
引用
收藏
页码：6500 / 6503
页数：4
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