Soft Graphoepitaxy of Block Copolymer Assembly with Disposable Photoresist Confinement

被引：151
|
作者：
Jeong, Seong-Jun [1 ]
Kim, Ji Eun [1 ]
Moon, Hyoung-Seok [1 ]
Kim, Bong Hoon [1 ]
Kim, Su Min [2 ,3 ]
Kim, Jin Baek [2 ,3 ]
Kim, Sang Ouk [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Chem, Taejon 305701, South Korea
[3] Korea Adv Inst Sci & Technol, Sch Mol Sci BK21, Taejon 305701, South Korea
来源：
NANO LETTERS | 2009年 / 9卷 / 06期
关键词：
LITHOGRAPHY; FILMS; NANOSTRUCTURE; ALIGNMENT; ARRAYS;
D O I：
10.1021/nl9004833
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We demonstrate soft graphoepitaxy of block copolymer assembly as a facile, scalable nanolithography for highly ordered sub-30-nm scale features. Various morphologies of hierarchical block copolymer assembly were achieved by means of disposable topographic confinement of photoresist pattern. Unlike usual graphoepitaxy, soft graphoepitaxy generates the functional nanostructures; of metal and semiconductor nanowire arrays without any trace of structure-directing topographic pattern. Our novel approach is potentially advantageous for multilayer overlay processing required for complex device architectures.
引用
收藏
页码：2300 / 2305
页数：6
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