Soft Graphoepitaxy of Block Copolymer Assembly with Disposable Photoresist Confinement

被引：151

作者：

Jeong, Seong-Jun ^{[1
]}

Kim, Ji Eun ^{[1
]}

Moon, Hyoung-Seok ^{[1
]}

Kim, Bong Hoon ^{[1
]}

Kim, Su Min ^{[2
,3
]}

Kim, Jin Baek ^{[2
,3
]}

Kim, Sang Ouk ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Chem, Taejon 305701, South Korea

[3] Korea Adv Inst Sci & Technol, Sch Mol Sci BK21, Taejon 305701, South Korea

来源：

NANO LETTERS | 2009年 / 9卷 / 06期

关键词：

LITHOGRAPHY; FILMS; NANOSTRUCTURE; ALIGNMENT; ARRAYS;

D O I：

10.1021/nl9004833

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate soft graphoepitaxy of block copolymer assembly as a facile, scalable nanolithography for highly ordered sub-30-nm scale features. Various morphologies of hierarchical block copolymer assembly were achieved by means of disposable topographic confinement of photoresist pattern. Unlike usual graphoepitaxy, soft graphoepitaxy generates the functional nanostructures; of metal and semiconductor nanowire arrays without any trace of structure-directing topographic pattern. Our novel approach is potentially advantageous for multilayer overlay processing required for complex device architectures.

引用

页码：2300 / 2305

页数：6

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