A novel technology for the formation of a very small bevel angle for edge termination

被引：19

作者：

Yan, F

Qin, C

Zhao, JH

机构：

[1] Rutgers State Univ, SiCLAB, ECE Dept, Piscataway, NJ 08854 USA

[2] United Silicon Carbide Inc, New Brunswick Technol Ctr, New Brunswick, NJ 08901 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

avalanche breakdown; edge termination; inductively coupled plasma; positive bevel;

D O I：

10.4028/www.scientific.net/MSF.389-393.1305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A novel technology toward achieving a bevel edge termination with a very low bevel angle has been developed. 4H-SiC diodes terminated by the positive bevel fabricated with this technology are demonstrated. The reverse current-voltage (I-V) characteristics are reported.

引用

页码：1305 / 1308

页数：4