High Mobility High-Ge-Content SiGe PMOSFETs Using Al2O3/HfO2 Stacks With In-Situ O3 Treatment

被引：40

作者：

Ando, Takashi ^{[1
]}

Hashemi, Pouya ^{[1
]}

Bruley, John ^{[1
]}

Rozen, John ^{[1
]}

Ogawa, Yohei ^{[2
]}

Koswatta, Siyuranga ^{[1
]}

Chan, Kevin K. ^{[1
]}

Cartier, Eduard A. ^{[1
]}

Mo, Renee ^{[1
]}

Narayanan, Vijay ^{[1
]}

机构：

[1] IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] ULVAC, Yorktown Hts, NY 10598 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 03期

关键词：

High-k; SiGe channel; FinFET;

D O I：

10.1109/LED.2017.2654485

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We developed an Al2O3/ HfO2 bi-layer gate dielectric with an in-situ O-3 treatment for interface state density (D-it) and gate leakage current density (J(g)) reductions on SiGe channels. We observed Ge-content dependent equivalent oxide thickness (EOT) scaling and EOT 0.44 nm was achieved with an MOS capacitor with a Si-0.Ge-05(0.95) substrate. The O3 treatment enabled application to non-planar device structures and we demonstrated five orders of magnitude lower off currents (I-off), a sub-threshold slope of 68 mV/decade, and a very high hole mobility of 457 cm(2)V(-1)s(-1) at an inversion carrier density (N-inv) of 1 x 10(13) cm(-2) for asymmetrically strained SiGe PMOSFETs with Ge% of 65%-70%.

引用

页码：303 / 305

页数：3

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