Controllable Growth of Nanocrystalline Diamond Films by Hot-Filament Chemical Vapor Deposition Method

被引：5

作者：

Li, Yunlong ^{[1
]}

Li, Junjie ^{[1
]}

Wang, Qiang ^{[1
]}

Yang, Yang ^{[1
]}

Gu, Changzhi ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2009年 / 9卷 / 02期

关键词：

Nanocrystalline Diamond Films; CH4; Concentration; Bias Current; ION-BOMBARDMENT; FIELD-EMISSION; NUCLEATION; SUBSTRATE; HYDROGEN; BIAS; CVD;

D O I：

10.1166/jnn.2009.C088

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Nanocrystalline diamond (NCD) films are deposited on Si wafer by using bias-assisted hot-filament chemical vapor deposition (HFCVD) method. The average grain size was controllable by varying CH, concentration. The scanning electron microscopy (SEM), Raman scattering spectroscopy and X-ray diffraction (XRD) were used to investigate the morphology, phase purity, and crystallinity of NCD films, respectively. Furthermore, we found that the morphological evolving of NCD films was corresponding to the variation of bias current, which might have close relation to thermal field electrons emission from NCD films at high temperature during the growth process, and then the related mechanism was discussed.

引用

页码：1062 / 1065

页数：4

共 18 条

[11] The effect of ion bombardment on the nucleation of CVD diamond [J].